Total Ionizing Dose and Single Event Effect Studies of a 0 . 25 μ m CMOS Serializer ASIC
نویسندگان
چکیده
A 0.25μm CMOS serializer ASIC, designed using radiation tolerant layout practice, was exposed to proton beam at various flux levels and accumulated fluence over 1.9×10 protons/cm (100 Mrad (Si)). The ASIC survived this total ionizing dose (TID) with no degradation in function. Single event effect (SEE) cross-sections are also calculated.
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تاریخ انتشار 2007